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Growth of Bulk SiGe Single Crystals by Liquid Phase Diffusion Method
Experimental and Computational Aspects
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193 b
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SiGe is an emerging semiconductor material with many §promising applications in high-speed micro §electronics and thermo-photovoltaics. In light of §significant differences in physical properties of §constituent elements, it is still a challenge to §grow bulk SiGe single crystals with uniform §composition and low defect density. Thus, it is §essential to scrutinize the solidification behaviour §of SiGe system. Hence, this book presents a combined §experimental and modelling study for the growth of §SiGe single crystals by a new solution growth §process called Liquid Phase Diffusion (LPD). §Following a brief introduction of the subject, the §crystal structure, phase diagram, growth techniques §used for producing SiGe single crystals and their §place in the overall scheme of SiGe alloy systems §are presented. The development of a macroscopic §mixture model is presented to model the LPD growth §system. The LPD growth system is examined using two- §and three-dimensional transient simulations. The §design, construction, and testing of the LPD growth §system are presented along with the experimental §results and characterization of grown crystals.
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