Nehodí se? Vůbec nevadí! U nás můžete do 30 dní vrátit
S dárkovým poukazem nešlápnete vedle. Obdarovaný si za dárkový poukaz může vybrat cokoliv z naší nabídky.
30 dní na vrácení zboží
In this book an analytical sub threshold surface potential, threshold voltage and drain current model for linear and Gaussian profile based Double Halo Dual Material Gate MOSFET (DHDMG) is proposed.The results thus obtained are compared with a 2D device simulator DESSIS. The model results are found to match well with those from DESSIS. The idea is also extended to find the characteristic parameters for non-conventional MOSFETs.